国产化高压大容量尽缘栅双极晶体管（insulated gate bipolar transistor，IGBT）器件成为制约我国柔性直流工程经济性和安全性的关键技术之一。针对国产4 500 V/3 000 A双面烧结弹性压接IGBT模块，建立计及纳米银烧结层Anand本构模型和碟簧机械特性的多物理场模型，并对其进行可靠性分析。首先建立了IGBT模块的多物理场仿真模型并且验证其有效性；其次，基于IGBT模块MMC实际服役电流应力进行整流工况和逆变工况下各功率器件的损耗计算，并且对IGBT器件处于逆变工况下的损耗进行热-力仿真分析；最后，根据实际服役应力对国产4 500 V/3 000 A双面烧结弹性压接IGBT模块的集电极烧结层和发射极烧结层进行疲劳分析和寿命预测。仿真结果表明，发射极烧结层在芯片与发射极钼片所接触的4个边角区域部位寿命最低，双面烧结封装和碟簧的增加有助于提高模块的可靠性。

Domestically produced high-voltage high-capacity insulated gate bipolar transistor (IGBT) devices have become one of the key technologies that constrain the economic and safety of China′s flexible and straight engineering. Focusing on the domestically produced 4 500 V/3 000 A double-sided sintered elastic pressure bonded IGBT modules, a multi⁃physical field model is established which takes into account the Anand constitutive model of the nano silver sintered layer and the mechanical properties of the disc spring, and reliability analysis is conducted. Firstly a multi⁃physical field simulation model for IGBT modules is established and its effectiveness is verified. Secondly, based on the actual service current stress of the IGBT module MMC, the losses of various power devices under rectification and inversion conditions are calculated, and the losses of IGBT devices under inversion conditions are analyzed through thermal mechanical simulation. Finally, fatigue analysis and life prediction are carried out on the collector and emitter sintered layers of domestically produced 4 500 V/3 000 A double-sided sintered elastic pressed IGBT modules based on actual service stress. The simulation results show that the sintering layer of the emitter has the lowest lifespan in the four corner areas where the chip contacts the emitter molybdenum sheet. The addition of double-sided sintering packaging and disc springs helps to improve the reliability of the module.