Silicon carbide (SiC) power devices have the advantages of high voltage, high temperature and high frequency, which show great potential to be used in future power grid. Several major breakthroughs in R&D and industrialization of SiC material and devices obtained resently are introduced. With 6 inch 4H-SiC wafer and its extensional products are avaliable and getting more mature, SiC power devices with higher voltage, larger conduct current and more efficiency will be developed. The perspectives of applications of SiC power electronic devices in power grid are proposed. Full SiC power devices have shown great advantanges and market perspect of distributed energy converter, solid-state transformer and solid-state breaker.