Due to its solderless, wireless, and double-sided heat dissipation, the press-pack IGBT (insulated gate bipolar transistor) is widely used in large-capacity inverters. Its reliability and life prediction have also attracted the attention of academics and industry. In this paper, a finite element simulation method for temperature field of press-pack IGBT module based on equivalent conductivity is proposed. It directly reflects the characteristics that the power dissipation of the internal chip of the press-pack IGBT module changes with temperature. This method also further improves the accuracy of temperature field simulation, and establishes the basis of simulation calculation for module reliability analysis and life prediction. In addition, the temperature field simulation of a certain type of crimping IGBT module under MMC conditions is obtained, and the internal temperature distribution of the module under this condition is obtained.