The press-pack IGBTs (PPIs) is a tightly coupled system of thermal, electrical and mechanical fields, of which the heat and borne pressure are transferred through inner layers while conducting current. Therefore, the aging mechanism of PPIs is different from that of power module IGBTs (PMIs). It is necessary to adopt new test methods to carry out accelerated aging test, as to obtain more analysis data for the research of aging mechanism.In this paper, according to existing references, an accelerated aging testing method with multi-excitation sources and multi-parameter monitors is implemented on the PPIs based on the half-bridge MMC sub-module to figure out the failure process. Combined with characteristics of the chip and package, methods with multi-excitation sources including high junction temperature operating test, impulse cycling test, power cycling test and temperature cycling test are studied, with the test topology and parameter setting principle defined, so as to comprehensively stimulate the aging failure process of PPIs. In order to observe the degradation process of PPIs as far as possible, an on-line monitoring method and a periodic discrete monitoring method are proposed to monitor the characteristic parameters of PPIs, such as the collector current, forward saturation voltage drop and the case temperature of the heat sink.