Domestically produced high-voltage high-capacity insulated gate bipolar transistor (IGBT) devices have become one of the key technologies that constrain the economic and safety of China′s flexible and straight engineering. Focusing on the domestically produced 4 500 V/3 000 A double-sided sintered elastic pressure bonded IGBT modules, a multi⁃physical field model is established which takes into account the Anand constitutive model of the nano silver sintered layer and the mechanical properties of the disc spring, and reliability analysis is conducted. Firstly a multi⁃physical field simulation model for IGBT modules is established and its effectiveness is verified. Secondly, based on the actual service current stress of the IGBT module MMC, the losses of various power devices under rectification and inversion conditions are calculated, and the losses of IGBT devices under inversion conditions are analyzed through thermal mechanical simulation. Finally, fatigue analysis and life prediction are carried out on the collector and emitter sintered layers of domestically produced 4 500 V/3 000 A double-sided sintered elastic pressed IGBT modules based on actual service stress. The simulation results show that the sintering layer of the emitter has the lowest lifespan in the four corner areas where the chip contacts the emitter molybdenum sheet. The addition of double-sided sintering packaging and disc springs helps to improve the reliability of the module.